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Introduction of GaN Half-Bridge Driver and Power Stage IC Circuits
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As one of the trending third-generation semiconductor technologies, GaN devices have higher switching frequency and lower switching losses compared with conventional Si devices. To maximize GaN HEMT performance, NOVOSENSE has launched a GaN half bridge driver IC NSD2621 and a GaN power stage IC NSG65N15K. This video will introduce these two product series by exploring their circuits in detail.
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